JFETs - Electronic Components Distributor - page 8

Manufacturers

Panasonic Electronic Components

National Semiconductor

Renesas Electronics America Inc

Diodes Incorporated

Microchip Technology

Toshiba Semiconductor and Storage

Microsemi Corporation

Texas Instruments

Infineon Technologies

Central Semiconductor Corp

Nisshinbo Micro Devices Inc.

Rochester Electronics, LLC

Qorvo

NTE Electronics, Inc

Solid State Inc.

Linear Integrated Systems, Inc.

InterFET

NTE Electronics, Inc

Intersil

Precision Monolithics

Harris Corporation

Fairchild Semiconductor

NEC Corporation

Sanyo

Linear Technology

Advanced Micro Devices

Burr Brown

Motorola

Featured Products

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Part Number	Manufacturer	Description	In stock	Quantity	Package	Status	Detail
OP285GSZ	Analog Devices Inc.	IC OPAMP JFET 2 CIRCUIT 8SOIC	8067	RFQ	Tube	Active	Detail
AD824ARZ-14-REEL	Analog Devices Inc.	IC OPAMP JFET 4 CIRCUIT 14SOIC	2500	RFQ	Tape & Reel (TR)	Active	Detail
AD711KRZ	Analog Devices Inc.	IC OPAMP JFET 1 CIRCUIT 8SOIC	2549	RFQ	Tube	Active	Detail
AD8220TRMZ-EP-R7	Analog Devices Inc.	IC OPAMP JFET 1 CIRCUIT 8MSOP	2000	RFQ	Tape & Reel (TR)	Active	Detail
LT1122DS8#PBF	Analog Devices Inc.	IC OPAMP JFET 1 CIRCUIT 8SO	2353	RFQ	Tube	Active	Detail
AD744JRZ	Analog Devices Inc.	IC OPAMP JFET 1 CIRCUIT 8SOIC	5141	RFQ	Tube	Active	Detail
AD648JNZ	Analog Devices Inc.	IC OPAMP JFET 2 CIRCUIT 8DIP	1896	RFQ	Tube	Active	Detail
AD713JRZ-16-REEL	Analog Devices Inc.	IC OPAMP JFET 4 CIRCUIT 16SOIC	1988	RFQ	Tape & Reel (TR)	Active	Detail
LT1113CS8#PBF	Analog Devices Inc.	IC OPAMP JFET 2 CIRCUIT 8SO	6766	RFQ	Tube	Active	Detail
AD820BRZ	Analog Devices Inc.	IC OPAMP JFET 1 CIRCUIT 8SOIC	3835	RFQ	Tube	Active	Detail
ADA4627-1ARZ	Analog Devices Inc.	IC OPAMP JFET 1 CIRCUIT 8SOIC	1308	RFQ	Tube	Active	Detail
LT1058CN#PBF	Analog Devices Inc.	IC OPAMP JFET 4 CIRCUIT 14DIP	1135	RFQ	Tube	Active	Detail

8 / 268 page，total 3207 results

JFETs

Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.